1 elm5b801qa - n 5 - g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit maximum junction - to - a mbient steady-state r ja 120 c /w parameter symbol limit unit drain - s ource voltage vds - 2 0 v gate - s ource v oltag e vgs 12 v conti nuous drain current t a = 25 c id -4.5 a t a = 70 c -3.8 pulsed d rain current idm - 12 a power dissipation t c = 25 c pd 6.5 w t c = 70 c 4.2 j unction and storage temperature range tj , tstg - 55 to 150 c elm5b801qa - n uses advanced trench technology to provide excellent r ds(on) and low gate charge. dual p-channel mosfet s 1 g1 d1 s 2 g2 d2 pin configuration c ircuit dfn6- 2 x2 (top vi ew) pin no. pin name 1 source 1 2 gate 1 3 drain 2 4 source 2 5 gate 2 6 drain1 ? vds =- 2 0v ? id =- 4.5 a , rds (on) = 96 m (vgs =- 4 .5v) ? id =- 3.8 a , rds (on) = 1 28 m (vgs =- 2 .5v) ? id =- 2 .5 a , rds (on) = 1 8 0 m (vgs =- 1.8 v) t a = 25 c . u nless otherwise noted.
2 5 - elm5b801qa - n electrical characteristics parameter symbol condition min. typ. max. unit static parameters drain - s ource breakdown voltage bvdss id =- 25 0 a , vgs = 0v - 2 0 v zero g ate voltage drain current idss vds =- 16 v, vgs = 0v -1 a t a = 8 5 c -30 gate - b ody leakage current ig s s vds = 0v , vgs = 12 v 100 n a gate t hreshold voltage vg s( th) vds = vgs , id =- 25 0 a -0.3 -0.8 v on s tate drain current i d ( on ) vgs =- 4.5 v, vds =- 5v -8 a vgs =- 2 .5 v, vds =- 5v -3 static drain - s ource on - r esistance r d s (o n ) vgs =- 4.5 v, id = -4.5 a 86 96 m vgs =- 2 .5v, id = - 3. 8 a 114 128 vgs =- 1 .8v, id =- 2.5 a 150 180 forward transconductance gfs vds =- 5v, id =- 2.8 a 6.5 s diode forward voltage vsd i s =- 1.25a, vgs=0v -0.75 -1.30 v max. body - d iode continuous c urrent is -1.6 a dynamic parameters input capacitance c iss vgs = 0v, vds =- 1 0 v, f = 1mh z 375 pf output capacitance c oss 80 pf reverse transfer capacitance c r ss 60 pf switching parameters total gate charge q g vgs =- 4.5 v, vds =- 1 0 v id = -3.5 a 5 .00 10 .00 nc gate - s ource charge q gs 0.85 nc gate - d rain charge q gd 1.50 nc turn - o n delay time t d (on) vgs =- 4.5 v, vds =- 1 0 v id=-3.5a, r l = 2.85 rgen = 1 15 25 ns turn - o n rise t ime t r 36 60 ns turn - o ff delay time t d ( of f ) 25 50 ns turn - o ff fall t ime t f 15 25 ns dual p-channel mosfet t a = 25 c . u nless otherwise noted.
3 elm5b801qa - n 5 - typical electrical and thermal characteristics dual p-channel mosfet a f p 2 9 1 1 w 2 0 v p - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . b n o v . 2 0 1 1 p a g e 3 t y p i c a l c h a r a c t e r i s t i c s
4 5 - elm5b801qa - n dual p-channel mosfet a f p 2 9 1 1 w 2 0 v p - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . b n o v . 2 0 1 1 p a g e 4 t y p i c a l c h a r a c t e r i s t i c s
5 elm5b801qa - n 5 - dual p-channel mosfet t est circuit & waveform a f p 2 9 1 1 w 2 0 v p - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . b n o v . 2 0 1 1 p a g e 5 t y p i c a l c h a r a c t e r i s t i c s
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